Optical Control of Topological Quantum Transport in Semiconductors
نویسندگان
چکیده
منابع مشابه
Optical control of topological quantum transport in semiconductors.
Intense coherent laser radiation red-detuned from absorption edge can reactively activate sizable Hall-type charge and spin transport in n-doped paramagnetic semiconductors as a consequence of k-space Berry curvature transferred from the valence band to the photon-dressed conduction band. In the presence of disorder, the optically induced Hall conductance can change sign with laser intensity.
متن کاملcontrol of the optical properties of nanoparticles by laser fields
در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...
15 صفحه اولQuantum Transport in Diluted Magnetic Semiconductors
The chapter highlights selected electric charge transport phenomena studied recently in low dimensional structures of DMSs. The first part describes transport phenomena related to the quantum interference of scattered electron waves in diffusive transport regime at the boundary of metalinsulator transition. The second part is devoted to Landau quantization of electronic states, as quantum Hall ...
متن کاملOptical control of spins in semiconductors
Recent and ongoing optical experiments on mechanisms and methods for control and gating of spin relaxation in semiconductor quantum wells are reviewed. We discuss work on high-mobility two-dimensional electron gases in (001)-grown GaAs/AlGaAs wells which reveals two new aspects of D’yakonov, Perel’ and Kachorovskii (DPK) spin dynamics, namely oscillatory spin evolution in a quasi-collision-free...
متن کاملQuantum of optical absorption in two-dimensional semiconductors.
The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, ind...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2007
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.99.047401